Infineon Technologies AG announced on Monday it has signed a non-binding Memorandum of Understanding with Stellantis as the first step towards a potential multi-year supply cooperation for silicon carbide (SiC) semiconductors for electric vehicles.
Infineon would reserve manufacturing capacity and supply CoolSiC™ “bare die” chips in the second half of the decade to the direct Tier 1 suppliers of Stellantis. The potential sourcing volume and capacity reservation has a value of significantly more than €1 billion ($1.034 billion).
“We firmly believe in electromobility and are excited to develop partnerships with leading automotive companies like Stellantis that make it a part of people’s everyday life,” said Peter Schiefer, Division President Automotive of Infineon. “Compared to traditional power technologies, silicon carbide increases the range, efficiency, and performance of electric vehicles. With our leading CoolSiC™ technology and continuous investments in our manufacturing capacities, we are well positioned to meet the growing demand for power electronics in electromobility.”
Infineon and Stellantis are in talks about delivering the CoolSiC Gen2p 1200 V and CoolSiC Gen2p 750 V-chips for electric vehicles under the Stellantis brands. The unmatched performance, reliability, and quality of CoolSiC technology would allow Stellantis to build vehicles with longer ranges and lower consumption for the best user experience – and support the company in its efforts to standardize, simplify and modernize platforms.
Infineon has a market-leading role as a high-quality and high-volume supplier to the automotive industry. Infineon is preparing for the accelerated demand of the industry with significant investments. In 2024, for example, Infineon’s new fab for SiC technologies will start manufacturing in Kulim, Malaysia. It will complement existing manufacturing capacities in Villach, Austria, following Infineon’s multi-site strategy.